发明名称 |
Trench-gate MOSFET device and method for making the same |
摘要 |
The embodiments of the present disclosure disclose a trench-gate MOSFET device and the method for making the trench-gate MOSFET device. The trench-gate MOSFET device comprises a curving dopant profile formed between the body region and the epitaxial layer so that the portion of the body region under the source metal contact has a smaller vertical thickness than the other portion of the body region. The trench-gate MOSFET device in accordance with the embodiments of the present disclosure has improved UIS capability compared with the traditional trench-gate MOSFET device. |
申请公布号 |
US8735973(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201213462397 |
申请日期 |
2012.05.02 |
申请人 |
ZHANG LEI;DISNEY DONALD RAY;LI TIESHENG;MA RONGYAO;CHENGDU MONOLITHIC POWER SYSTEMS CO., LTD. |
发明人 |
ZHANG LEI;DISNEY DONALD RAY;LI TIESHENG;MA RONGYAO |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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