发明名称 |
High mechanical strength additives for porous ultra low-k material |
摘要 |
A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si—O—Si bonding group and at least one bridging organic functional group. |
申请公布号 |
US8736014(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US20080271617 |
申请日期 |
2008.11.14 |
申请人 |
LIN BO-JIUN;LO CHING-YU;CHEN HAI-CHING;BAO TIEN-I;YU CHEN-HUA;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN BO-JIUN;LO CHING-YU;CHEN HAI-CHING;BAO TIEN-I;YU CHEN-HUA |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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