| 摘要 |
<p>Provided is a method for fabricating a semiconductor device which can increase the capacitance of a capacitor without increasing the thickness of a mold. The method for fabricating a semiconductor device includes forming an insulating layer where a first mold layer, a first support layer, a second mold layer, and a second support layer are successively stacked on a substrate, forming a contact hole in the insulating layer, forming a lower electrode in the contact hole, removing the lower part of the second support layer and the second mold layer, removing the first mold layer, and forming a second support pattern which surrounds the lower electrode and a first support pattern respectively.</p> |
