发明名称 |
PROCESS FOR CONTROLLING THE ACCEPTOR STRENGTH OF SOLUTION-PROCESSED TRANSITION METAL OXIDES FOR OLED APPLICATIONS |
摘要 |
The present invention provides a process for the adjustment of the electron acceptor strength of a transition metal oxide (TMO) to the HOMO of a semiconducting hole transport layer material (HTL material) in a device comprising an anode, a layer of said TMO deposited on said anode and a layer of said HTL material deposited on said TMO layer, comprising: depositing a solution comprising a precursor for said TMO on said anode, wherein the precursor solution has a pH selected so that the acceptor strength of the TMO for which the solution is a precursor is adjusted to the HOMO of said HTL material; drying the deposited solution to form a solid layer precursor layer; depositing a solution of said HTL material onto said solid layer precursor layer; and annealing thermally the resulting product to give the desired device having TMO at the interface between said anode and said HTL. |
申请公布号 |
US2014138660(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201214129275 |
申请日期 |
2012.06.21 |
申请人 |
KUGLER THOMAS;WILSON RICHARD J.;CAMBRIDGE DISPLAY TECHNOLOGY LIMITED |
发明人 |
KUGLER THOMAS;WILSON RICHARD J. |
分类号 |
H01L51/50;H01L51/52 |
主分类号 |
H01L51/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|