Apparatus and method of producing an electronic device

摘要

A semiconductor substrate which is placed on a bottom electrode inside a chamber is dry-etched by creating plasma inside the chamber. By making the average surface roughness Ra of the bottom surface of a quartz-top plate placed on the bottom electrode be in a range of 0.2 to 5 mu m, adhesion between the quartz-top plate and the deposits caused by the dry etching is enhanced, and the number of particles suspended in the chamber is reduced. Furthermore, the function of enhancing the adhesion of deposits can be maintained even after cleaning of the quartz-top plate. As a result, the number of particles which adhere onto the semiconductor substrate is reduced and the semiconductor substrate can be processed in a extremely clean atmosphere .