发明名称 |
Method for making FINFETs and semiconductor structures formed therefrom |
摘要 |
A method for making FinFETs and semiconductor structures formed therefrom is disclosed, comprising: providing a SiGe layer on a Si semiconductor substrate and a Si layer on the SiGe layer, wherein the lattice constant of the SiGe layer matches that of the substrate; patterning the Si layer and the SiGe layer to form a Fin structure; forming a gate stack on top and both sides of the Fin structure and a spacer surrounding the gate stack; removing a portion of the Si layer which is outside the spacer with the spacer as a mask, while keeping a portion of the Si layer which is inside the spacer; removing a portion of the SiGe layer which is kept after the patterning, to form a void; forming an insulator in the void; and epitaxially growing stressed source and drain regions on both sides of the Fin structure and the insulator. |
申请公布号 |
US8729638(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201113696071 |
申请日期 |
2011.11.30 |
申请人 |
ZHU HUILONG;LUO ZHIJIONG;YIN HAIZHOU;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
ZHU HUILONG;LUO ZHIJIONG;YIN HAIZHOU |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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