发明名称 SPUTTERING METHOD AND SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a sputtering method capable of densifying a film formed by a simple method, when a film is formed by applying AC power (high-frequency power) to a target of an insulator.SOLUTION: A substrate W is installed on a metal stage 5 provided in a vacuum treatment chamber 1a, and sputter gas is introduced into the vacuum treatment chamber subjected to vacuum drawing, and AC power is inputted into a target 2 provided in the vacuum treatment chamber to sputter the target, and to thereby form a film on the substrate surface. During sputtering, the electric potential of the stage 5 is set in the floating state.
申请公布号 JP2014091861(A) 申请公布日期 2014.05.19
申请号 JP20120244621 申请日期 2012.11.06
申请人 ULVAC JAPAN LTD 发明人 NAKAMURA SHINYA;IWASAWA HIROAKI;FUJII YOSHIJI
分类号 C23C14/34 主分类号 C23C14/34
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