SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing characteristic deterioration caused by miniaturization, and a method for manufacturing the same.SOLUTION: A semiconductor device according to an embodiment comprises a ground layer and a plurality of transistors arranged in a plane parallel to an upper surface of the ground layer on the ground layer. Each of the plurality of transistors includes a channel which passes current in a first direction crossing the plane. The ground layer includes a first region and a second region provided next to the first region in the plane. Channels of a plurality of the transistors provided on the first region among the plurality of transistors have a first crystal orientation. Channels of a plurality of the transistors provided on the second region among the plurality of transistors have a second crystal orientation different from the first crystal orientation.