发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ANTENNA SWITCH MODULE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in harmonic distortion characteristics while preventing thermal destruction due to self-heating of an FET element of an antenna switch formed on an SOI substrate and controlling large output for high frequencies, to provide a method of manufacturing the semiconductor device, and to provide an antenna switch module.SOLUTION: A semiconductor device has a high-frequency switch device on an SOI (silicon on insulator) substrate, and includes uniform first kind of crystal defects that are formed in the entire supporting substrate of the SOI substrate.
申请公布号 JP2014093504(A) 申请公布日期 2014.05.19
申请号 JP20120245161 申请日期 2012.11.07
申请人 SONY CORP 发明人 MOTOYAMA RIICHI;TSUNEMI DAIKI;YAMAGATA HIDEO
分类号 H01L21/322;H01L21/02;H01L21/263;H01L21/265;H01L27/12 主分类号 H01L21/322
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