发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ANTENNA SWITCH MODULE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in harmonic distortion characteristics while preventing thermal destruction due to self-heating of an FET element of an antenna switch formed on an SOI substrate and controlling large output for high frequencies, to provide a method of manufacturing the semiconductor device, and to provide an antenna switch module.SOLUTION: A semiconductor device has a high-frequency switch device on an SOI (silicon on insulator) substrate, and includes uniform first kind of crystal defects that are formed in the entire supporting substrate of the SOI substrate. |
申请公布号 |
JP2014093504(A) |
申请公布日期 |
2014.05.19 |
申请号 |
JP20120245161 |
申请日期 |
2012.11.07 |
申请人 |
SONY CORP |
发明人 |
MOTOYAMA RIICHI;TSUNEMI DAIKI;YAMAGATA HIDEO |
分类号 |
H01L21/322;H01L21/02;H01L21/263;H01L21/265;H01L27/12 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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