| 摘要 |
A p-type semiconductor block is made of a p-type thermoelectric conversion material, and has a pillar portion and a connection portion laterally protruding from the pillar portion. In addition, an n-type semiconductor block is made of an n-type thermoelectric conversion material, and has a pillar portion and a connection portion laterally protruding from the pillar portion. The p-type semiconductor block and the n-type semiconductor block are alternately arranged in such a way that the connection portion of the p-type semiconductor block is connected with the pillar portion of the n-type semiconductor block and the connection portion of the n-type semiconductor block is connected with the pillar portion of the p-type semiconductor block. The connection portions and tip-end portions of the pillar portions are made of a thermoelectric conversion material containing metal powder. |
