| 发明名称 |
SELF-BOOTSTRAPPING FIELD EFFECT DIODE STRUCTURES AND METHODS |
| 摘要 |
A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode. |
| 申请公布号 |
US2014131763(A1) |
申请公布日期 |
2014.05.15 |
| 申请号 |
US201414158599 |
申请日期 |
2014.01.17 |
| 申请人 |
STMICROELECTRONICS N.V. |
发明人 |
ANKOUDINOV ALEXEI;RODOV VLADIMIR |
| 分类号 |
H01L29/74 |
主分类号 |
H01L29/74 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
