发明名称 POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD
摘要 In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is S0. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S=S0/2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a<b<c). In the present invention, the electrode pairs 10 are placed inside of the imaginary concentric circle C and outside of the imaginary concentric circle B, and the gas supplying nozzle 9 is placed inside of the imaginary concentric circle A.
申请公布号 US2014134832(A1) 申请公布日期 2014.05.15
申请号 US201214130627 申请日期 2012.09.20
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 KUROSAWA YASUSHI;NETSU SHIGEYOSHI;HOSHINO NARUHIRO
分类号 H01L21/02;C23C16/24 主分类号 H01L21/02
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