发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To inhibit the occurrence of a failure to make it impossible to perform electrolytic plating on a region inside a chip and surrounded by a groove.SOLUTION: A semiconductor device comprises: a surface protection film 15 formed on a semiconductor substrate 11 on which an element region 12 is formed; and a groove 16 which surrounds the element region 12 and an opening which exposes input/output terminals 13 of the element region 15, which are formed on the surface protection film 15. The groove 16 includes a region 16-1 formed with a first width and a region 16-2 formed with a second width wider than the first width. With this configuration, the occurrence of a failure to make it impossible to perform electrolytic plating on a region inside a chip surrounded by the groove can be inhibited.
申请公布号 JP2014090008(A) 申请公布日期 2014.05.15
申请号 JP20120237735 申请日期 2012.10.29
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 KOYASHIKI TAKESHI ; SAWADA TOYOJI ; SAITO NORIAKI ; HARA AKIO ; IZUMI MASAAKI
分类号 H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/522 主分类号 H01L21/3205
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