发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To inhibit the occurrence of a failure to make it impossible to perform electrolytic plating on a region inside a chip and surrounded by a groove.SOLUTION: A semiconductor device comprises: a surface protection film 15 formed on a semiconductor substrate 11 on which an element region 12 is formed; and a groove 16 which surrounds the element region 12 and an opening which exposes input/output terminals 13 of the element region 15, which are formed on the surface protection film 15. The groove 16 includes a region 16-1 formed with a first width and a region 16-2 formed with a second width wider than the first width. With this configuration, the occurrence of a failure to make it impossible to perform electrolytic plating on a region inside a chip surrounded by the groove can be inhibited. |
申请公布号 |
JP2014090008(A) |
申请公布日期 |
2014.05.15 |
申请号 |
JP20120237735 |
申请日期 |
2012.10.29 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
KOYASHIKI TAKESHI ; SAWADA TOYOJI ; SAITO NORIAKI ; HARA AKIO ; IZUMI MASAAKI |
分类号 |
H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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