| 摘要 |
Disclosed are a semiconductor device and a manufacturing method therefor. An exemplary method may comprise: forming on a substrate a first semiconductor layer and a second semiconductor layer in sequence; patterning the second semiconductor layer and the first semiconductor layer, so as to form an initial fin; forming on the substrate an isolation layer, the isolation layer exposing a part of the first semiconductor layer, thereby limiting the fin located above the isolation layer; and forming on the isolation layer a gate stack across the fin, wherein the first semiconductor layer comprises a compound semiconductor, and the concentration of at least one component in the compound semiconductor has a gradual distribution in the stacking direction of the first semiconductor layer and the second semiconductor layer. |
