发明名称 Fabrication method of Zn and Ti-doped BiFeO3 Thin Film
摘要 The present invention relates to a composition for a BiFeO3 thin film with Zn and Ti and a fabrication method thereof. The composition for a BiFeO3 thin film with zinc and titanium enhances ferroelectric characteristics by increasing chemical stability through the excess addition of Bi ions in an A-site of the BiFeO3 and the substitution of a small amount of Zn ions and Ti ions in a B-site, improves ferroelectric characteristics and leakage current characteristics by reducing the generation of oxygen vacancies generated in the inner space of the thin film, improves the problems of the BFO thin film with a low residual polarization value and high conductivity by changing the deposition condition and addition of the Zn ions and Ti ions, and presents development possibility. [Reference numerals] (AA) Minimize the pressure of a chamber before deposition (Minimize impurities within the chamber);(BB) Fix the oxygen partial pressure of the chamber at 30 mTorr;(CC) Fix the temperature of a substrate at 530°C;(DD) Start deposition;(EE) Temperature drop after deposition;(FF) Deposited film
申请公布号 KR101394340(B1) 申请公布日期 2014.05.14
申请号 KR20120066929 申请日期 2012.06.21
申请人 发明人
分类号 C01G9/00;C01G23/00;C01G29/00;C01G49/00 主分类号 C01G9/00
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