发明名称 Electrostatic discharge protection device
摘要 An electrostatic discharge (ESD) includes a semiconductor substrate having the first conductive type, a well having the first conductive type, a buried layer having the second conductive type and a well having the second conductive type. The buried layer having a second conductive type is disposed in the semiconductor substrate under the well having the first conductive type. The well having the second conductive type disposed to divide the well having the first conductive type into a first well and a second well. The well having the second conductive type contacts the buried layer, and the well having the second conductive type and the buried layer are jointly used to isolate the first well from the second well.
申请公布号 US8723263(B2) 申请公布日期 2014.05.13
申请号 US201213556219 申请日期 2012.07.24
申请人 CHAO MEI-LING;CHEN YI-CHUN;CHEN LU-AN;LAI TAI-HSIANG;TANG TIEN-HAO;UNITED MICROELECTRONICS CORP. 发明人 CHAO MEI-LING;CHEN YI-CHUN;CHEN LU-AN;LAI TAI-HSIANG;TANG TIEN-HAO
分类号 H01L23/62 主分类号 H01L23/62
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