发明名称 |
METHOD FOR MANUFACTURING GROUP III NITRIDE FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride film capable of separating the group III nitride film grown on a substrate and having the same composition of constituent elements as the substrate at a high yield.SOLUTION: A method for manufacturing a group III nitride film comprises the steps of: growing a first III group nitride film 11 having the same composition of constituent elements as a group III nitride substrate 10 and a Si concentration of 1×10cmor more on the group III nitride substrate 10; growing a second III group nitride film 12 having the same composition of constituent elements as the first III group nitride film 11 and each impurity concentration of 1-2×10cmor less on the first III group nitride film 11; and decomposing the first III group nitride film 11 by irradiating a laminated film sheet 1 having the first III group nitride film 11 and the second III group nitride film 12 grown in this order on the group III nitride substrate 10 with a laser beam L having a wavelength of 8 μm or more and 12 μm or less to separate the second III group nitride film 12 from the group III nitride substrate 10. |
申请公布号 |
JP2014084263(A) |
申请公布日期 |
2014.05.12 |
申请号 |
JP20120236515 |
申请日期 |
2012.10.26 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
UEMATSU KOJI;YAMAMOTO YOSHIYUKI |
分类号 |
C30B29/38;C23C16/34;C23C16/56;C30B33/04 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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地址 |
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