发明名称 METHOD FOR MANUFACTURING GROUP III NITRIDE FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride film capable of separating the group III nitride film grown on a substrate and having the same composition of constituent elements as the substrate at a high yield.SOLUTION: A method for manufacturing a group III nitride film comprises the steps of: growing a first III group nitride film 11 having the same composition of constituent elements as a group III nitride substrate 10 and a Si concentration of 1×10cmor more on the group III nitride substrate 10; growing a second III group nitride film 12 having the same composition of constituent elements as the first III group nitride film 11 and each impurity concentration of 1-2×10cmor less on the first III group nitride film 11; and decomposing the first III group nitride film 11 by irradiating a laminated film sheet 1 having the first III group nitride film 11 and the second III group nitride film 12 grown in this order on the group III nitride substrate 10 with a laser beam L having a wavelength of 8 μm or more and 12 μm or less to separate the second III group nitride film 12 from the group III nitride substrate 10.
申请公布号 JP2014084263(A) 申请公布日期 2014.05.12
申请号 JP20120236515 申请日期 2012.10.26
申请人 SUMITOMO ELECTRIC IND LTD 发明人 UEMATSU KOJI;YAMAMOTO YOSHIYUKI
分类号 C30B29/38;C23C16/34;C23C16/56;C30B33/04 主分类号 C30B29/38
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