DEVICE FOR LIQUID PHASE EPITAXY OF MULTILAYER SEMICONDUCTOR STRUCTURES

摘要

FIELD: electricity.SUBSTANCE: device contains a body 1 with a cover 2, a container 3 with source melts reservoirs equipped with pistons 4, a multi-sectional holder 14 of substrates, a growth station 5 and channels for melts delivery and output. The container 3 with reservoirs is located under the multi-sectional holder 14 of substrates. The cover 2 is equipped with protrusions to output excess of melts. The device contains additional reservoirs 7 for a part of used melts which are installed over the container 3; each reservoir is equipped with a cover 8 with load and a port for melt discharge to the main container 3 located beneath.EFFECT: suppressing undesired interaction of impurities in different melts for growing through gaseous phase thus improving technical or electric and physical parameters of the obtained structures.2 cl, 2 dwg, 2 ex