| 摘要 |
The method involves fusing a surface of a semiconductor wafer by scanning the surface by an energetic fusion beam, and defining reference length. Parameters e.g. fusion beam movement speed parameters, fusion beam power density parameters or flow rate parameters of fusion beam filler material, of the fusion beam are adjusted to smelt a local area (112) of the surface during scanning the surface so as to realize the fusion, where length of the local area is greater than or equal to the reference length. The realized fusion allows the smoothing of the surface. An independent claim is also included for a semiconductor wafer. |
