| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that ensures contact to a source region and a drain region of a thin-film transistor.SOLUTION: The semiconductor device comprises: a first interlayer insulating film formed on an insulating film on a semiconductor layer and a gate electrode; a second interlayer insulating film formed on the first interlayer insulating film; and contact holes provided in the second interlayer insulating film, the first interlayer insulating film, and the insulating film. The film thickness of the first interlayer insulating film is formed so as to be one third or less of the total thickness of the stack of the insulating films.</p> |
