| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, in a power semiconductor device, a high voltage occurs at the time of switching, and the voltage can cause insulation breakdown of a thin insulating film such as a gate insulating film.SOLUTION: A power semiconductor device according to the present invention includes: a semiconductor substrate composed of a wide band-gap material; a drift layer; a cell region formed in a surface layer of the drift layer; a second well layer formed in a different region from the cell region; a gate insulating film formed on the cell region side on the second well region; a field insulating film formed on the opposite side to the cell region side on the second well region and having a larger film thickness than the gate insulating film; a gate electrode formed on the gate insulating film and on the field insulating film; a second well contact hole formed closer to the opposite side to the cell region side than to the boundary between the gate insulating film and the field insulating film; and a source pad electrically connecting the cell region and the second well region via the second well contact hole. |
