| 摘要 |
<p>Provided is a Cu-In-Ga-Se alloy sputtering target used when forming a CIGS film for forming a light-absorbing layer for a solar cell having a high photoelectric conversion efficiency. Said sputtering target is a sintered body consisting primarily of copper, indium, gallium, and selenium, with the remainder comprising unavoidable impurities, and the atomic ratio of selenium (Se/(Se+Cu+In+Ga)) in the base material for said sintered body is between 50.1% and 60%, inclusive.</p> |
