发明名称 LIGHT EMITTING DIODE WITH NANOSTRUCTURED LAYER AND METHODS OF MAKING AND USING
摘要 A light emitting diode has a plurality of layers including at least two semiconductor layers. A first layer of the plurality of layers has a nanostructured surface which includes a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern, each ridge element having a wavelike cross-section and oriented substantially in a first direction.
申请公布号 KR20140054183(A) 申请公布日期 2014.05.08
申请号 KR20147005864 申请日期 2011.08.05
申请人 WOSTEC, INC. 发明人 SMIRNOV VALERY KONSTANTINOVICH;KIBALOV DMITRY STANISLAVOVICH
分类号 H01L33/02 主分类号 H01L33/02
代理机构 代理人
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