发明名称 |
Solid-state imaging apparatus |
摘要 |
<p>In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.
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申请公布号 |
EP2565925(A3) |
申请公布日期 |
2014.05.07 |
申请号 |
EP20120004985 |
申请日期 |
2012.07.05 |
申请人 |
HITACHI, LTD. |
发明人 |
FURUKAWA, TOMOYASU;SAKAI, SATOSHI;NONAKA, YUSUKE;SUGINO, SHINYA |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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