| 摘要 |
<p>Disclosed is an epitaxial wafer (300B) including a substrate (110), and an epitaxial structure (210B) disposed on the substrate (110), wherein the epitaxial structure (210B) includes a first epitaxial layer (212B), a second epitaxial layer (214B) disposed on the first epitaxial layer (212B), and a third epitaxial layer (216) disposed between the first epitaxial layer (212B) and the second epitaxial layer (214B), the third epitaxial layer (216) having a first doping concentration around a first boundary adjacent to the first epitaxial layer (212B) and a second doping concentration different from the first doping concentration around a second boundary adjacent to the second epitaxial layer (214B).</p> |
