发明名称 |
Method of making a semiconductor device having a passivation layer and corresponding semiconductor device |
摘要 |
The method involves providing a semiconductor substrate (1) e.g. p-type semiconductor or n-type semiconductor, and forming a functional layer on a semiconductor surface of the substrate. A doping region (3) is produced at the surface by collecting a doping substance i.e. aluminum, from the functional layer in the substrate. The functional layer is formed in such a manner that the functional layer is passivated as a passivation layer (4) of the semiconductor surface during manufacture of a semiconductor device. An opening (21) is formed in the functional layer application of energy. An independent claim is also included for a semiconductor device comprising a semiconductor substrate. |
申请公布号 |
EP2416386(A3) |
申请公布日期 |
2014.05.07 |
申请号 |
EP20110176530 |
申请日期 |
2011.08.04 |
申请人 |
HANWHA Q.CELLS GMBH |
发明人 |
ENGELHART, PETER;SCHERFF, MAXIMILIAN;BORDIHN, STEFAN;KLOETER, BERNHARD |
分类号 |
H01L31/18;H01L21/225;H01L21/268;H01L21/56;H01L31/0216;H01L31/0236;H01L31/068 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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