| 摘要 |
A non-volatile memory element including a first electrode; a second electrode; and a variable resistance layer. The variable resistance layer including, when a first metal is M and a second metal is N, a third metal oxide layer NOz; a second metal oxide layer NOy; and a first metal oxide layer MOx such that the third, second and first metal oxide layers are stacked in this order; wherein when an oxygen content atomic percentage of an oxide of the first metal M in a stoichiometric state is A, an oxygen content atomic percentage of an oxide of the second metal N in a stoichiometric state is B, an oxygen content atomic percentage of MOx is C, an oxygen content atomic percentage of NOy is D, and an oxygen content atomic percentage of NOz is E, (D/B)<(C/A), (E/B)<(C/A) and y<z are satisfied. |
