发明名称 |
PRE-CHARGE DURING PROGRAMMIMG FOR 3RD MEMORY USING GATE- INDUCED DRAIN LEAKAGE |
摘要 |
In a programming operation of a 3D stacked non-volatile memory device, the channel of an inhibited NAND string is pre-charged by gate-induced drain leakage (GIDL) to achieve a high level of boosting which prevents program disturb in inhibited storage elements. In a program-verify iteration, prior to applying a program pulse, the drain-side select gate transistor is reverse biased to generate GIDL, causing the channel to be boosted to a pre-charge level such as 1.5V. Subsequently, when the program pulse is applied to a selected word line and pass voltages are applied to unselected word lines, the channel is boosted higher from the pre-charge level due to capacitive coupling. The pre- charge is effective even for a NAND string that is partially programmed because it does not rely on directly driving the channel from the bit line end. |
申请公布号 |
WO2014066264(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
WO2013US65970 |
申请日期 |
2013.10.21 |
申请人 |
SANDISK TECHNOLOGIES, INC;DUNGA, MOHAN;DONG, YINGDA;OU, WENDY |
发明人 |
DUNGA, MOHAN;DONG, YINGDA;OU, WENDY |
分类号 |
G11C16/34;G11C16/04 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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