发明名称 |
SEMICONDUCTOR DEVICE HAVING GROUND SHIELD STRUCTURE AND FABRICATION METHOD THEREOF |
摘要 |
Semiconductor devices having a ground shield structure and methods for their formation are provided herein. An exemplary semiconductor device can include a substrate, a ground ring, a ground shield, an electronic device, and/or an insulation layer. The ground ring can be disposed over the substrate. The ground shield can be disposed over the substrate and surrounded by the ground ring. The ground shield can include a plurality of coaxial conductive wirings and a metal wire passing through the plurality of coaxial conductive wirings along a radial direction. The metal wire can be connected to the ground ring. The electronic device can be disposed over the ground shield. The insulation layer can be disposed between the ground shield and the electronic device. |
申请公布号 |
US2014117496(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201314028733 |
申请日期 |
2013.09.17 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
CHENG JENHAO;WANG XINING;LIU LING |
分类号 |
H01L23/522;H01L23/552;H01L49/02 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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