| 摘要 |
<p>The present invention relates to a method for preparing an Au target, which is used for a semiconductor redistributed layer (RDL) or a bump, and relates to a method for preparing the same by layering a powder on a waste target. A wet method, which is a conventional method for preparing an Au target, requires a long processing time since recovery is carried out through dissolution using aqua regia. By recycling a waste target, the present invention is effective in preparation time and cost reduction. To this end, a high-purity Au target is prepared by: surface-treating a waste target; preparing a high-purity powder within a short time using plasma, which is a dry process for a powder preparation; and injecting the prepared high-purity powder into the waste target.</p> |
