SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Achieved is a semiconductor device manufacturing method that prevents a high-concentration impurity layer serving as a diffusion source used in solid state diffusion in one manufacturing process for a semiconductor device from contaminating another semiconductor device to be manufactured with the same equipment and that also reduces fluctuation in the characteristics of the semiconductor device caused by mobile ions in a sealed resin. The semiconductor device manufacturing method includes a solid state diffusion process for forming a diffusion area (cathode area, 103) constituting a semiconductor device (thyristor, 100) by solid state diffusion. The solid state diffusion process includes a process for forming a high-concentration impurity layer serving as an impurity diffusion source on a semiconductor substrate (N-type silicon substrate, 101) such that the high-concentration impurity layer selectively contacts a predetermined area of the semiconductor substrate, a process for diffusing the impurities from the high-concentration impurity layer to the semiconductor substrate by heat treatment to form the diffusion area, and a process for removing the high-concentration impurity layer after the heat treatment.