发明名称 POWER SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF
摘要 There are provided a power semiconductor module and a manufacturing method thereof, the power semiconductor module including: a lead frame; a base substrate including a circuit wiring formed on an insulating layer thereof; a plurality of power semiconductor devices disposed to contact the circuit wiring; and a multilayer substrate formed by stacking a plurality of substrates and electrically connecting the power semiconductor devices and the lead frame to one another using a connection line formed therein and having conductivity.
申请公布号 US2014117524(A1) 申请公布日期 2014.05.01
申请号 US201313735603 申请日期 2013.01.07
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM KWANG SOO;SOHN YOUNG HO;SUH BUM SEOK;PARK MIN GYU;LEE YOUNG KI
分类号 H01L23/00 主分类号 H01L23/00
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