MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING THE SAME

摘要

A high-frequency power supply 10 includes a shaft 16 bonded to one surface of a plate 12 serving as a gas distributor plate. The plate 12 includes a radio-frequency electrode 14 buried therein. The shaft 16 has a through-hole 20 through which a gas flows. The plate 12 and the shaft 16 are made of a ceramic material. The shaft 16 has a double-tube structure including the inner tube 18 and the outer tube 22. The interior space of the inner tube 18 forms the through-hole 20. The plate 12 is hermetically solid-state bonded to the inner tube 18 and the outer tube 22. The shaft 16 is bonded to the center of the plate 12.