发明名称 |
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL |
摘要 |
A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal. |
申请公布号 |
EP1860213(B1) |
申请公布日期 |
2014.04.30 |
申请号 |
EP20060728999 |
申请日期 |
2006.03.13 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
IWATA, HIROKAZU;SARAYAMA, SEIJI;FUKUDA, MINORU;TAKAHASHI, TETSUYA;TAKAHASHI, AKIRA |
分类号 |
C30B9/00;C30B15/00;C30B15/32;C30B17/00;C30B29/40 |
主分类号 |
C30B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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