发明名称 |
Bipolar junction transistor with a self-aligned emitter and base |
摘要 |
Methods for fabricating bipolar junction transistors with self-aligned emitter and extrinsic base, bipolar junction transistors made by the methods, and design structures for a BiCMOS integrated circuit. The bipolar junction transistor is fabricated using a sacrificial emitter pedestal that provides a sacrificial mandrel promoting self-alignment between the emitter and the extrinsic base. The sacrificial emitter pedestal is subsequently removed to open an emitter window extending to the intrinsic base. An emitter is formed in the emitter window that lands on the intrinsic base. |
申请公布号 |
US8710500(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201313755192 |
申请日期 |
2013.01.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;DAHLSTROM ERIK M.;GRAY PETER B.;HARAME DAVID L.;LIU QIZHI |
分类号 |
H01L29/737 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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