| 摘要 |
Apparatus and methods disclosed herein implement a MOS resistor using the current channel of a MOS transistor. The MOS resistance R(DS) is dependent upon MOS transistor geometry and nominal gate voltage. MOS resistor terminal-to-gate voltages are averaged and applied to the MOS transistor gate such as to maintain the MOS resistor terminal voltage to current ratio, resulting in a substantially constant R(DS). R(DS) is also compensated for temperature and process variations by adjusting gate voltages via negative feedback methods. |
