发明名称 SUBSTRAT TEMPORAIRE, PROCEDE DE TRANSFERT ET PROCEDE DE FABRICATION
摘要 The present invention relates to a method of manufacturing a temporary substrate, the temporary substrate thus produced, and a method of using the temporary substrate for transfer of a thin layer from an original substrate to a final substrate. The temporary substrate has a principle part of the original substrate and a surface layer thereon that includes a plurality of inserts formed of a material having a coefficient of thermal expansion different from that of the material constituting the rest of the surface layer. When exposed to heat treatment, these inserts form detachment zones between the upper face of an attached thin layer and the temporary substrate.
申请公布号 FR2962848(B1) 申请公布日期 2014.04.25
申请号 FR20100055767 申请日期 2010.07.15
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 RIOU GREGORY
分类号 H01L21/20;H01L21/306;H01L21/762 主分类号 H01L21/20
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