SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a silicon carbide semiconductor device wherein electric field intensity of a gate insulating film is relaxed, and on-resistance is low. The silicon carbide semiconductor device has: an n-type silicon carbide substrate (1); a drift layer (2) formed on the upper surface of the n-type silicon carbide substrate (1); a trench (7), which is formed in the drift layer (2), and which has a gate insulating film (8) and a gate electrode (9) inside; a p-type high-concentration well region (6), which is formed in parallel to the trench (7) by being spaced apart from the trench, and which is deeper than the trench (7); and a p-type body region (4), which is formed gradually deeper toward a lower end of the p-type high-concentration well region (6) from a position further toward the upper surface side than a bottom portion end of the trench (7) to the extent of the thickness of the gate insulating film (8) on the bottom portion of the trench (7).