SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

摘要

A semiconductor device (1) is provided with a substrate (10) comprising silicon carbide, insulating films (20, 40) formed on a surface (10A) of the substrate (10), a buffer film (51) that does not contain Al, and an electrode (52) that contains Al. The substrate (10) has a conductive region (12). The semiconductor device has a contact hole (80) that is formed on the conductive region (12) and penetrates through the insulating films (20, 40) and causes the surface (10A) of the substrate (10) to be exposed. The buffer film (51) extends upwards from the bottom surface (80B) of the side wall surface (80A) of the contact hole (80). The electrode (52) is formed so as to be in contact with the conductive region (12) at the bottom surface (80B) of the contact hole (80), and is also formed on top of the insulating films (20, 40) with the buffer film (51) interposed therebetween.