发明名称 PHOTOCROSSLINKABLE ANTHRACENE CONTAINING HIGH THERMAL RESISTANT POLYBENZOXAZOLE, COMPOSITION CONTAINING THE SAME FOR FORMING ORGANIC GATE INSULATOR AND THIN-FILM TRANSISTOR USING THE SAME
摘要 <p>The present invention relates to a high heat resistant polybenzoxazole compound containing photo-curable anthracene, an organic insulator forming composition containing the same, and a thin-film transistor using the same, and more specifically, the highly polymerized compound relates to a photo-curable polybenzoxazole polymerized compound having excellent chemical resistance, especially chemical resistance to a base, insulation properties, and heat resistance, an organic insulator forming composition comprising the same, and a thin-film transistor using the same.</p>
申请公布号 KR20140047330(A) 申请公布日期 2014.04.22
申请号 KR20120113454 申请日期 2012.10.12
申请人 KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY 发明人 KA, JAE WON;YI, MI HYE;JANG, KWANG SUK;KIM, JIN SOO;SEO, MIN HYE;KIM, HEE SUN
分类号 C08G73/22;C08L79/04;H01B3/30;H01L29/786 主分类号 C08G73/22
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