| 摘要 |
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). At least some shots in the plurality of shots overlap other shots. In some embodiments,βf is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity toβf expands the process window for the charged particle beam lithography process. |
