| 摘要 |
PROBLEM TO BE SOLVED: To increase the power generation efficiency greatly by reducing the contact resistance of a p-type electrode 3 and a strip p-type semiconductor region 110, and prolonging the lifetime of carriers generated in the strip p-type semiconductor region 110, in a solar cell 100 where a p-type electrode 2 and an n-type electrode 3 are arranged on the back surface of a semiconductor substrate 1 on the reverse side of the light-receiving surface.SOLUTION: In a solar cell 100, a power generation region Rm is provided on the back surface of a semiconductor substrate 1, by forming a strip n-type semiconductor region 109 and a strip p-type semiconductor region 110 so that a PN junction is formed by the strip n-type semiconductor region 109 and strip p-type semiconductor region 110. A portion of the p-type semiconductor region 110 coming into contact with a p-type electrode 3 is composed of a high concentration p-type semiconductor region 111 having a higher impurity concentration when compared with other part. |
