| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a photosensor in which a semiconductor mesa can be formed more stably with less variation in the upper area, and to provide a method of manufacturing an infrared sensor, a photosensor and a compound semiconductor substrate.SOLUTION: A compound semiconductor lamination 11 is formed by laminating an n-type semiconductor layer 12 composed of a group III-V compound semiconductor, an i-type semiconductor layer 13, a p-type barrier layer 14 having an energy bandgap larger than that of the i-type semiconductor layer 13, a p-type semiconductor layer 15 and a cap layer 16 in this order on a substrate 10. Subsequently, a resist mask 18 is formed on the compound semiconductor lamination 11. Furthermore, a semiconductor mesa 11a is formed by wet etching the compound semiconductor lamination 11 exposed from below the resist mask 18. The cap layer 16 is composed of a material having a fluctuation range of etching rate, due to change of etchant used in a mesa formation step, smaller than that of the p-type semiconductor layer 15. |
