| 摘要 |
PROBLEM TO BE SOLVED: To improve luminous efficiency of a group III nitride semiconductor light-emitting element.SOLUTION: A group III nitride semiconductor light-emitting element comprises a light-emitting layer 15 having an MQW structure in which a plurality of pairs each including a structure of a well layer 15a, a cap layer 15b and a barrier layer 15c which are sequentially laminated are repeatedly laminated. The well layer 15a is composed of InGaN. The cap layer 15b has a structure in which a GaN layer 15b-1 and an AlGaN layer 15b-2 are sequentially laminated from the well layer 15a side. The barrier layer 15c is composed of AlGaN. An Al composition ratio of the AlGaN layer 15b-2 is higher than an Al composition ratio of the barrier layer 15c. Regarding the Al composition ratio of the AlGaN layer 15b-2, when the light-emitting layer 15 is divided into two regions of a front half region (n-clad layer 14 side) and a back half region (p-clad layer 16 side), an Al composition ratio of the AlGaN layer 15b-2 in the front half region is lower than an Al composition ratio of the AlGaN layer 15b-2 in the back half region. |
