| 发明名称 |
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate. |
| 申请公布号 |
US2014106558(A1) |
申请公布日期 |
2014.04.17 |
| 申请号 |
US201314144584 |
申请日期 |
2013.12.31 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSU CHUN-WEI;HUANG PO-CHENG;TSAI TENG-CHUN;HSU CHIA-LIN;LIN CHIH-HSUN;CHEN YEN-MING;CHEN CHIA-HSI;KUNG CHANG-HUNG |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
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