发明名称 |
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES |
摘要 |
A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element. |
申请公布号 |
US2014106535(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201314134008 |
申请日期 |
2013.12.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JAEKYU;SUH KISEOK;YOON TAE EUNG |
分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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