发明名称 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
摘要 A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element.
申请公布号 US2014106535(A1) 申请公布日期 2014.04.17
申请号 US201314134008 申请日期 2013.12.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JAEKYU;SUH KISEOK;YOON TAE EUNG
分类号 H01L45/00;H01L27/24 主分类号 H01L45/00
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