| 摘要 |
<p>Provided is a method for producing a silicon epitaxial wafer that has gettering capability and in which crystal defects are reduced, in order to prevent dark current and white scratches from occurring when a solid-state image-pickup element is formed, as well as a method for producing a solid-state image-pickup element using the same. The silicon epitaxial wafer has such a configuration that an epitaxial layer is formed on a silicon monocrystalline substrate, and the concentration of carbon atoms dissolved in solid in the epitaxial layer is set to 5×1015 atoms/cm3 or more, and 5×1016 atoms/cm3 or less.</p> |
