| 摘要 |
PROBLEM TO BE SOLVED: To improve the yield of a solid-state image sensor by suppressing intrusion of contaminants into an interface between an organic film and a counter electrode.SOLUTION: A method of manufacturing a solid-state image sensor comprises: setting a first shadow mask 5, which exposes a plurality of pixel electrodes 12 by one opening and covers a counter electrode connection electrode 13, to a substrate 10 provided with the pixel electrodes 12 and the counter electrode connection electrode 13; forming an organic layer 17 on the pixel electrodes 12 through the first shadow mask 5; forming a first counter electrode layer 21 on the organic layer 17 through the first shadow mask 5; and thereafter removing the first shadow mask 5 and forming a connection part 22 for electrically connecting the first counter electrode layer 21 and the counter electrode connection electrode 13. |
