SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce a gate leakage current in a tunnel transistor.SOLUTION: According to an embodiment of the invention, a semiconductor device comprises: a gate electrode formed on a substrate via a gate insulating film; a source region of a first conductivity type; and a drain region of a second conductivity type which is opposite to the first conductivity type. The source region and the drain region are formed in the substrate so as to sandwich the gate electrode. A work function in a first region on the side of the source region in the gate electrode is shifted toward the first conductivity type as compared to a work function in a second region on the side of the drain region in the gate electrode.