发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed. |
申请公布号 |
EP2486595(A4) |
申请公布日期 |
2014.04.16 |
申请号 |
EP20100821866 |
申请日期 |
2010.09.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD. |
发明人 |
YAMAZAKI, SHUNPEI;KOYAMA, JUN;TAKAHASHI, MASAHIRO;KISHIDA, HIDEYUKI;MIYANAGA, AKIHARU;NAKAMURA, YASUO;SUGAO, JUNPEI;UOCHI, HIDEKI |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L27/12;H01L29/45;H01L29/49;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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